gallium nitride造句

• Jelenski , a . " gallium nitride - new material for microwave and optoelectronics .
  "氮化镓-微波与光电元件的新材料.
• Synthesis and luminescence of gallium nitride led blue light conversion materials
  氮化镓发光二级管蓝光转换材料的合成和发光性质
• They are confident of this thanks to the development of a compound , gallium nitride , that can be used instead of the more conventional sapphire , thereby halving the cost of the leds
  小组成员对此极有信心，因为他们开发了一种氮化镓的化合物，取代更多的传统青玉，从而使发光二极管成本缩减一半。
• A simple route for the synthesis of unique 1d nanostructures , including brush - like gallium nitride nanostructure , oriented amorphous silicon nanowires and in @ sio2 nanocables , was developed on the basis of vls and sls mechanisms
  藉由vls与sls机制，我们成功地合成出具有特殊方向性的刷状氮化镓奈米晶体、非晶相二氧化矽奈米线，及二氧化矽包覆铟之一维奈米结构。
• C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line . over the years , sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led
  C -轴切型的蓝宝石是近年来应用在生长氮化镓蓝光led重要的基材。兆晶科技新近增加此产品以因应光电业者殷切的需求。
• This work was supported by the state science and technology ministry of p . r . china under the contact no . g20000683 - 06 , and by the national natural science foundation of p . r . china under grant no . 60046001 . gallium nitride is one of the 3rd generation semiconductor materials . from 1990 ' s , gan has attracted more and more attention and advanced rapidly , mainly due to its direct transition , wide band gap ( ~ 3 . 4ev ) and other excellent characters
  Gan是直接跃迁的宽带隙材料，具有禁带宽度大( 3 . 4ev ，远大于si的1 . 12ev ，也大于sic的3 . 0ev ) ，电子漂移饱和速度高，介电常数小，导热性能好等特点，在光电子器件和电子器件领域有着广泛的应用前景。
• This work was supported by the state science and technology ministry of the p . r . china under the contact no . g20000683 - 06 , and by the national natural science foundation of p . r . china under grant no . 60046001 . recently , gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly , mainly due to its promising applications in short - wave light - emitting devices , photodetectors , as well as anti - radiation , high frequency and high power electronic devices
  本硕士论文是基于国家科技部重点基础研究发展规划项目( 973项目)子课题“硅基宽带隙异质结构材料生长及器件研究” ( 2000年10月- 2005年9月， no . g20000683 - 06 )和国家自然科学基金( no . 60046001 )的一部分研究工作。
• Due to its intrinsic merits , such as wide band gap , high electron saturated drift velocity , high melting point , good coefficient of thermal conductivity , anti - radiation and good chemical stability , gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature , high frequency and high power electronic devices
  Gan是直接带隙半导体材料，以其禁带宽度大、电子饱和漂移速度大、熔点高、热导率高、抗辐射能力强和化学稳定性好等优点成为制造短波长光发射器件及高温、高频、大功率电子器件的理想材料。